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Ordering number:ENN781G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1208/2SC2910
High-Voltage Switching Audio 80W Output Predriver Applications
Features
* Adoption of FBET process. * High breakdown voltage. * Excellent linearity of hFE and small Cob. * Fast swtching speed.
Package Dimensions
unit:mm 2006B
[2SA1208/2SC2910]
6.0 5.0 4.7
0.5 0.6
6.0
14.0
3.0
8.5
0.5
0.5
123
( ) : 2SA1208
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1.45
1.45
1 : Emitter 2 : Collector 3 : Base SANYO : MP
Ratings (-)180 (-)160 (-)5 (-)70 (-)140 900 150 -55 to +150
Unit V V V mA mA mW
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VCB=(-)80V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)10mA VCE=(-)10V, IC=(-)10mA VCB=(-)10V, f=1MHz IC=(-)30mA, IB=(-)3mA 100* 150 (2.5)2.0 0.08 (-0.14) 0.3 (-0.4) Conditions Ratings min typ max (-)0.1 (-)0.1 400* MHz pF V Unit A A
* : The 2SA1208/2SC2910 are classified by 10mA hFE are follows :
Rank hFE R 100 to 200 S 140 to 280 T 200 to 400
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/8270MH/6080MO/3187AT/3125KI/0193KI, TS(KOTO) No.781-1/4
2SA1208/2SC2910
Continued from preceding page.
Parameter Turn-ON Time Fall Time Storage Time Symbol ton tf tstg Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min typ 0.1 0.2 1.0 max Unit s s s
Switching Time Test Circuit
IN 3k IB1 IB2 50 5k OUT
2k
1F --2V
1F 20V
IC=10IB1=--10IB2=10mA (For PNP, the polarity is reversed.)
--60
IC -- VCE
2SA1208
.3 m A
60
IC -- VCE
2SC2910
0.3 mA
A
--50
Collector Current, IC - mA
Collector Current, IC - mA
--0
--0
m .25
A
50
0.25m
40
--40
--0.2mA
0.2mA
0.15m A
0.1mA
--30
--0.15mA
30
--20
--0.1mA
--0.05mA
20
0.05mA
10
--10
IB=0
0 0 --10 --20 --30 --40 --50 --60 --70 0 0 10 20 30 40 50
IB=0
60 70
Collector-to-Emitter Voltage, VCE - V ITR03005
7 5 3
Collector-to-Emitter Voltage, VCE - V ITR03006
7
hFE -- IC
2SA1208 VCE=--5V
hFE -- IC
2SC2910 VCE=5V
5 3
75C
DC Current Gain, hFE
75C
25C --25C
DC Current Gain, hFE
2
25C --25C
2
100 7 5 3 2
100 7 5 3 2
10
5
7
--1.0
2 3 5 7 --10 2 Collector Current, IC - mA
3
5
7
--100
10
5
7
1.0
2
3
5
7
10
2
3
5
ITR03007
Collector Current, IC - mA
7 100 ITR03008
No.781-2/4
2SA1208/2SC2910
5
fT -- IC
Gain-Bandwidth Product, fT - MHz 2SA1208 VCE=--10V
5 3 2
fT -- IC
2SC2910 VCE=10V
Gain-Bandwidth Product, fT - MHz
3 2
100 7 5 3 2
100 7 5 3 2
10
5
7
--1.0
2
3
5
7
--10
2
3
5
Collector Current, IC - mA
10 7
7 --100 ITR03009
10
5
7
1.0
2
3
5
7
10
2
3
5
Collector Current, IC - mA
10
7 100 ITR03010
Cob -- VCB
2SA1208 f=1MHz Output Capacitance, Cob - pF
Cob -- VCB
2SC2910 f=1MHz
7 5
Output Capacitance, Cob - pF
5
3
3
2
2
1.0 7 5
1.0 7 5
2
3
5
7
--10
2
3
5
Collector-to-Base Voltage, VCB -- V
2
--100 ITR03011 2
7
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
7 100 ITR03012
VCE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 2SA1208 IC / IB=10
VCE(sat) -- IC
2SC2910 IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
--1000 7 5 3 2
1000 7 5 3 2
--100 7 5 3
75C
25C
100 7 5
25C
75C
--25C
5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 ITR03013
--25C
3 5 7 1.0 2 3 5 7 10 2 3 5
Collector Current, IC - mA
--80 --70
Collector Current, IC - mA
80
7 100 ITR03014
IC -- VBE
2SA1208 VCE=--5V Collector Current, IC - mA
IC -- VBE
2SC2910 VCE=5V
70 60 50 40 30 20 10 0
Collector Current, IC - mA
--60 --50 --40 --30 --20 --10 0
75C 25C --25C
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0
0.2
0.4
0.6
75C 25C --25C
0.8
1.0
1.2 ITR03016
Base-to-Emitter Voltage, VBE - V
ITR03015
Base-to-Emitter Voltage, VBE - V
No.781-3/4
2SA1208/2SC2910
7 5
VBE(sat) -- IC
2SA1208 IC / IB=10
Base-to-Emitter Saturation Voltage, VBE (sat) - V
7 5
VBE(sat) -- IC
2SC2910 IC / IB=10
Base-to-Emitter Saturation Voltage, VBE (sat) - V
3 2
3 2
1.0 7 5
25C
--25C
1.0 7 5
25C
--25C
75C
75C
3
5
7 --1.0
2
3
5
7 --10
2
3
5
Collector Current, IC - mA
7 --100 ITR03017
3
5
7
1.0
2
3
5
7
10
2
3
5
Collector Current, IC - mA
1000
7 100 ITR03018
ASO
3 2
PC -- Ta
2SA1208 / 2SC2910
ICP=140mA
Collector Dissipation, PC - mW
800
Collector Current, IC - mA
100 7 5 3 2 10 7 5 3 2 5
s 1m ms 10 ms 0 10
IC=70mA
600
DC
Op
era
tio
n
400
2SA1208 / 2SC2910 DC Single pulse (For PNP, minus sign is omitted.)
7 10 2 3 5 7 100 2 ITR03019
200
0
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE - V
Ambient Temperature, Ta - C
ITR03020
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice.
PS No.781-4/4

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